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Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates
- Source :
- Advanced materials (Deerfield Beach, Fla.). 25(7)
- Publication Year :
- 2012
-
Abstract
- By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm(2) V(-1) s(-1) , which is about three times the value of those grown on SiO(2) /Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice.
- Subjects :
- Electron mobility
Materials science
Graphene
Mechanical Engineering
Nanotechnology
Chemical vapor deposition
law.invention
chemistry.chemical_compound
Silicon nitride
chemistry
Chemical engineering
Mechanics of Materials
law
General Materials Science
Crystallite
Metal catalyst
Graphene nanoribbons
Subjects
Details
- ISSN :
- 15214095
- Volume :
- 25
- Issue :
- 7
- Database :
- OpenAIRE
- Journal :
- Advanced materials (Deerfield Beach, Fla.)
- Accession number :
- edsair.doi.dedup.....811711decc52df6245546948fbd4b0c7