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Rapid Characterization of SiC Crystals by Full-wafer Photoluminescence Imaging under Below-gap Excitation
- Source :
- Materials Science Forum. (1):545-548
- Publication Year :
- 2009
- Publisher :
- Trans Tech Publications, 2009.
-
Abstract
- We demonstrated the rapid and nondestructive observation of structural defects in SiC wafers by full-wafer photoluminescence (PL) imaging under below-gap excitation. The use of visible light emitting diode arrays as an excitation source is essential to the simplification of an optical system and the light excitation covering the whole wafer. We were able to observe the defect-related intensity patterns similar to those obtained by conventional laser-scanning PL mapping. The measurement time of the PL imaging was more than fifty times faster than that of the PL mapping.
- Subjects :
- Materials science
Photoluminescence
business.industry
Mechanical Engineering
Dislocations
Below-gap excitation
Condensed Matter Physics
Characterization (materials science)
Imaging
Optics
Mapping
Mechanics of Materials
Full-wafer inspection
Optoelectronics
General Materials Science
Wafer
Photoluminescence excitation
Dislocation
business
Structural defects
Excitation
Diode
Visible spectrum
Subjects
Details
- Language :
- English
- ISSN :
- 02555476
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi.dedup.....81bfc2b52fff972aa78fedcd23286868