Inverse and direct photoemission experiments (UV range) of the Si/Ni interfaces

The interfaces formed by Si evaporated onto a Ni(100) surface have been studied by ultraviolet photoemission and inverse photoemission spectroscopy in the VUV range. It is found that at room temperature the first stage of compound formation corresponds to a “Ni 2 Si” type silicide; as more and more silicon is deposited on the clean Ni surface, a NiSi-like phase is obtained and then finally amorphous silicon is observed for high coverage.