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Strain engineering of the silicon-vacancy center in diamond
- Publication Year :
- 2018
- Publisher :
- American Physical Society (APS), 2018.
-
Abstract
- We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.<br />Comment: 14 pages, 10 figures
- Subjects :
- Materials science
Silicon
genetic structures
Terahertz radiation
Spin transition
FOS: Physical sciences
chemistry.chemical_element
02 engineering and technology
Electronic structure
engineering.material
01 natural sciences
symbols.namesake
Condensed Matter::Materials Science
Strain engineering
quant-ph
Vacancy defect
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
0103 physical sciences
cond-mat.mes-hall
010306 general physics
Quantum Physics
Condensed Matter - Mesoscale and Nanoscale Physics
Condensed matter physics
Diamond
021001 nanoscience & nanotechnology
chemistry
symbols
engineering
sense organs
Quantum Physics (quant-ph)
0210 nano-technology
Hamiltonian (quantum mechanics)
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....858617b28a6a812d66e696586063cd54