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Atomic Vacancy Defect, Frenkel Defect and Transition Metals (Sc, V, Zr) Doping in Ti4N3 MXene Nanosheet: A First-Principles Investigation

Authors :
Qian Yao
Yangjun Li
Wan Zhao
Tingyan Zhou
Kun Yang
Jun Liu
Bo Wu
Source :
Applied Sciences, Vol 10, Iss 2450, p 2450 (2020), Applied Sciences, Volume 10, Issue 7
Publication Year :
2020
Publisher :
MDPI AG, 2020.

Abstract

Using first-principles calculations based on the density functional theory, the effects of atomic vacancy defect, Frenkel-type defect and transition metal Z (Z = Sc, V and Zr) doping on magnetic and electric properties of the Ti4N3 MXene nanosheet were investigated comprehensively. The surface Ti and subsurface N atomic vacancies are both energetically stable based on the calculated binding energy and formation energy. In addition, the former appears easier than the latter. They can both enhance the magnetism of the Ti4N3 nanosheet. For atom-swapped disordering, the surface Ti-N swapped disordering is unstable, and then the Frenkel-type defect will happen. In the Frenkel-type defect system, the total magnetic moment decreases due to the enhancement of indirect magnetic exchange between surface Ti atoms bridged by the N atom. A relatively high spin polarizability of approximately 70% was detected. Furthermore, the doping effects of transition metal Z (Z = Sc, V and Zr) on Ti4N3 nanosheet are explored. All doped systems are structurally stable and have relatively large magnetism, which is mainly induced by the directed magnetic exchange between surface Z and Ti atoms. Especially in the doped Ti4N3-Sc system, the high spin polarizability is still reserved, suggesting that this doped system can be a potential candidate for application in spintronics.

Details

ISSN :
20763417
Volume :
10
Database :
OpenAIRE
Journal :
Applied Sciences
Accession number :
edsair.doi.dedup.....85a91051cdd6706f4a34ca438205bfb6