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BiCMOS technology improvements for microwave application
BiCMOS technology improvements for microwave application
- Source :
- Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008)., 93-96, STARTPAGE=93;ENDPAGE=96;TITLE=Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008).
- Publication Year :
- 2008
- Publisher :
- IEEE, 2008.
-
Abstract
- The third generation of NXP 0.25 mum SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of -60 dB at 10 GHz.
- Subjects :
- Materials science
METIS-255443
business.industry
Heterojunction bipolar transistor
Electrical engineering
BiCMOS
Cutoff frequency
Silicon-germanium
law.invention
chemistry.chemical_compound
Capacitor
EWI-14875
chemistry
law
SC-RID: Radiation Imaging detectors
IR-65297
Radio frequency
business
Electrical impedance
Microwave
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
- Accession number :
- edsair.doi.dedup.....86430482946b9573c17526c7f37ea762
- Full Text :
- https://doi.org/10.1109/bipol.2008.4662720