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BiCMOS technology improvements for microwave application

BiCMOS technology improvements for microwave application

Authors :
Angel Rodríguez
T. Nesheiwat
N. Zhang
F. Neuilly
Francis Zaato
E. Hijzen
J. Melai
HongJiang Sun
W.D. van Noort
Source :
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008)., 93-96, STARTPAGE=93;ENDPAGE=96;TITLE=Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008).
Publication Year :
2008
Publisher :
IEEE, 2008.

Abstract

The third generation of NXP 0.25 mum SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of -60 dB at 10 GHz.

Details

Database :
OpenAIRE
Journal :
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Accession number :
edsair.doi.dedup.....86430482946b9573c17526c7f37ea762
Full Text :
https://doi.org/10.1109/bipol.2008.4662720