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Pristine PN junction toward atomic layer devices

Authors :
Hui Xia
Man Luo
Wenjing Wang
Hailu Wang
Tianxin Li
Zhen Wang
Hangyu Xu
Yue Chen
Yong Zhou
Fang Wang
Runzhang Xie
Peng Wang
Weida Hu
Wei Lu
Source :
Light: Science & Applications. 11
Publication Year :
2022
Publisher :
Springer Science and Business Media LLC, 2022.

Abstract

In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion and failure, it generally requires the foreign dopants localize in the designated micro-areas. This, however, is challenging due to an inevitable interdiffusion process. Here we report a brand-new junction architecture, called “layer PN junction”, that might break through such limit and help redefine the semiconductor device architecture. Different from all existing semiconductors, we find that a variety of van der Waals materials are doping themselves from n- to p-type conductance with an increasing/decreasing layer-number. It means the capability of constructing homogeneous PN junctions in monolayers’ dimension/precision, with record high rectification-ratio (>105) and low cut-off current (

Details

ISSN :
20477538
Volume :
11
Database :
OpenAIRE
Journal :
Light: Science & Applications
Accession number :
edsair.doi.dedup.....879eac1add226049cc1e72a289df4d4e
Full Text :
https://doi.org/10.1038/s41377-022-00814-8