Modeling of electron transport in corrugated quantum wires

We have studied the low-temperature magnetotransport in the singly and doubly corrugated wires. The application of a sufficiently negative gate bias might result in the formation of weakly coupled dots. In the structures considered here the corrugations act as weak perturbations on the quantum wire. Compared with the experimental results and the numerical simulations of the transports in these perturbed quantum wires, we show that oscillatory magnetoresistance features, observed in the doubly corrugated wire, arise from back-scattered orbits. The observation of wave function scarring in the quantum simulations is given the open nature of the weakly perturbed quantum wires.