Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

MLA

Degang Zhao, et al. “Improvement of Interface Morphology and Luminescence Properties of InGaN/GaN Multiple Quantum Wells by Thermal Annealing Treatment.” Results in Physics, vol. 31, Dec. 2021, p. 105057. EBSCOhost, https://doi.org/10.1016/j.rinp.2021.105057.

APA

Degang Zhao, Ping Chen, Jing Yang, Zongshun Liu, Yufei Hou, & Feng Liang. (2021). Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment. Results in Physics, 31, 105057. https://doi.org/10.1016/j.rinp.2021.105057

Chicago

Degang Zhao, Ping Chen, Jing Yang, Zongshun Liu, Yufei Hou, and Feng Liang. 2021. “Improvement of Interface Morphology and Luminescence Properties of InGaN/GaN Multiple Quantum Wells by Thermal Annealing Treatment.” Results in Physics 31 (December): 105057. doi:10.1016/j.rinp.2021.105057.