Highly-efficient GaAs/AlGaAs Nanopillars and NanoLEDs via SiNx Surface Passivation

Nanolight sources employing III-V GaAs semiconductor materials as the gain medium are crucial for the fabrication of miniaturized optical sources such as nanoLEDs and nanolasers with emerging applications in 3D sensing, optical data communication, spectroscopy, medical diagnosis and even neuromorphic computing [1] . However, the surfaces of GaAs-based compounds and their interfaces with dielectrics tend to host large densities of electronically active defects. Particularly, when the devices are scaled to the deep subwavelength size (<