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State diagram of spin-torque oscillator with perpendicular reference layer and planar field generation layer
- Source :
- Progress in Natural Science: Materials International, Vol 25, Iss 3, Pp 258-262 (2015)
- Publisher :
- The Authors. Production and hosting by Elsevier B.V.
-
Abstract
- The state diagram of spin-torque oscillator (STO) with perpendicular reference layer (REF) and planar field generation layer (FGL) was studied by a macrospin model and a micro-magnetic model. The state diagrams are calculated versus the current density, external field and external field angle. It was found that the oscillation in FGL could be controlled by current density combined with external field so as to achieve a wide frequency range. An optimized current and applied field region was given for microwave assisted magnetic recording (MAMR), considering both frequency and output field oscillation amplitude. The results of the macro-spin model were compared with those of the micro-magnetic model. The macro-spin model was qualitatively different from micro-magnetics and experimental results when the current density was large and the FGL was non-uniform.
- Subjects :
- Physics
Range (particle radiation)
Condensed matter physics
Field (physics)
business.industry
Oscillation
Electrical engineering
Spin-torque oscillator
Micromagnetic
Planar
lcsh:TA401-492
Perpendicular
MAMR
External field
lcsh:Materials of engineering and construction. Mechanics of materials
General Materials Science
Current (fluid)
State diagram
Macrospin
General
business
Current density
Subjects
Details
- Language :
- English
- ISSN :
- 10020071
- Issue :
- 3
- Database :
- OpenAIRE
- Journal :
- Progress in Natural Science: Materials International
- Accession number :
- edsair.doi.dedup.....8bf72c8ae1674b91b69692b76f97a938
- Full Text :
- https://doi.org/10.1016/j.pnsc.2015.05.007