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Heteroepitaxial Growth of Nanostructured Cerium Dioxide Thin Films by MOCVD on a (001) TiO2 Substrate

Heteroepitaxial Growth of Nanostructured Cerium Dioxide Thin Films by MOCVD on a (001) TiO2 Substrate

Authors :
Raffaella Lo Nigro
Roberta G. Toro
Ignazio L. Fragalà
Graziella Malandrino
Source :
Chemistry of materials 15 (2003): 1434–1440. doi:10.1021/cm021348r, info:cnr-pdr/source/autori:Lo Nigro R., Toro R.G., Malandrino G., Fragala I.L./titolo:Heteroepitaxial growth of nanostructured cerium dioxide thin films by MOCVD on a (001) TiO2 substrate/doi:10.1021%2Fcm021348r/rivista:Chemistry of materials/anno:2003/pagina_da:1434/pagina_a:1440/intervallo_pagine:1434–1440/volume:15
Publication Year :
2003
Publisher :
American Chemical Society (ACS), 2003.

Abstract

The deposition of epitaxial CeO2 nanostructured thin films on rutile (TiO2) substrates by metal-organic chemical vapor deposition (MOCVD) has been carried out in a wide temperature range. Films have been grown on (001)TiO2 from the Ce(III) 1,1,1,5,5,5-hexafluoro-2,4-pentanedionato diglyme adduct (Ce(hfa)(3)-diglyme). The X-ray diffraction patterns of all samples grown in the 450-750degreesC deposition temperature range point to the formation of -oriented CeO2 films, whereas at higher deposition temperatures (8501050degreesC) all the deposited CeO2 films show texture. fwhm rocking curves values clearly indicate that the texturing of CeO2 crystallites is greatly improved upon increasing the deposition temperature in both cases. Typical pole figure patterns demonstrate a cube-on-cube epitaxial growth in the case of -oriented CeO2 films, whereas -oriented CeO2 films show different in-plane alignments of the crystallites. A possible explanation for textural changes is proposed.

Details

ISSN :
15205002 and 08974756
Volume :
15
Database :
OpenAIRE
Journal :
Chemistry of Materials
Accession number :
edsair.doi.dedup.....8da0994ef0d2dac020d58f8e7df844a9
Full Text :
https://doi.org/10.1021/cm021348r