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New Materials in Memory Development Sub 50 nm: Trends in Flash and DRAM

Authors :
Marc Florian Beug
Gerald Dallmann
Roman Knoefler
Dirk Manger
Uwe Schroeder
Stephan Kudelka
Stefan Jakschik
Armin Tilke
Nicolas Nagel
Ulrike Bewersdorff
Karl Heinz Kuesters
Wolfgang Mueller
Christoph Ludwig
Source :
Advanced Engineering Materials. 11:241-248
Publication Year :
2009
Publisher :
Wiley, 2009.

Abstract

New materials are of key importance for scaling memories in the sub 50 nm generations. Currently high-k materials and metal gates are investigated for usage in Flash and DRAM memory. However, the requirements in the applications are different, leading to different material combinations. This paper gives an overview on new materials with focus on memory applications.

Details

ISSN :
15272648 and 14381656
Volume :
11
Database :
OpenAIRE
Journal :
Advanced Engineering Materials
Accession number :
edsair.doi.dedup.....8f264939381aa76432af345a9d323fcc
Full Text :
https://doi.org/10.1002/adem.200800298