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Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVD
- Source :
- Dipòsit Digital de la UB, Universidad de Barcelona, Recercat. Dipósit de la Recerca de Catalunya, instname
- Publication Year :
- 2004
- Publisher :
- Elsevier B.V., 2004.
-
Abstract
- In this paper, the influence of the deposition conditions on the performance of p–i–n microcrystalline silicon solar cells completely deposited by hot-wire chemical vapor deposition is studied. With this aim, the role of the doping concentration, the substrate temperature of the p-type layer and of amorphous silicon buffer layers between the p/i and i/n microcrystalline layers is investigated. Best results are found when the p-type layer is deposited at a substrate temperature of 125 °C. The dependence seen of the cell performance on the thickness of the i layer evidenced that the efficiency of our devices is still limited by the recombination within this layer, which is probably due to the charge of donor centers most likely related to oxygen.
- Subjects :
- Amorphous silicon
Solar cells
Silicon
Materials science
chemistry.chemical_element
Chemical vapor deposition
Substrate (electronics)
law.invention
chemistry.chemical_compound
Silici
law
Solar cell
Materials Chemistry
Doping
technology, industry, and agriculture
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Microcrystalline
Chemical engineering
chemistry
Ceramics and Composites
Cèl·lules solars
Layer (electronics)
Deposició química en fase vapor
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Dipòsit Digital de la UB, Universidad de Barcelona, Recercat. Dipósit de la Recerca de Catalunya, instname
- Accession number :
- edsair.doi.dedup.....8fa00aae0837ba14e9a834eb1240e77b