Engineering of $HfO_{2}$-based gradual resistive switching devices obtained from atomic layer deposited oxide bilayers

MLA

Hardtdegen, Alexander Tim. Engineering of $HfO_{2}$-Based Gradual Resistive Switching Devices Obtained from Atomic Layer Deposited Oxide Bilayers. Jan. 2022. EBSCOhost, https://doi.org/10.18154/RWTH-2022-10911.

APA

Hardtdegen, A. T. (2022). Engineering of $HfO_{2}$-based gradual resistive switching devices obtained from atomic layer deposited oxide bilayers. https://doi.org/10.18154/RWTH-2022-10911

Chicago

Hardtdegen, Alexander Tim. 2022. “Engineering of $HfO_{2}$-Based Gradual Resistive Switching Devices Obtained from Atomic Layer Deposited Oxide Bilayers,” January. doi:10.18154/RWTH-2022-10911.