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Comparative advantages of a type-II superlattice barrier over an AlGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors
- Source :
- Optics Letters. 46:3877
- Publication Year :
- 2021
- Publisher :
- Optica Publishing Group, 2021.
-
Abstract
- The barrier layer in InAs/GaSb LWIR nBn detector is usually composed of AlGaSb alloy, which has a non-negligible valence band offset and is sensitive to chemical solutions. In this work, we investigated a type-II superlattice (T2SL) barrier that is homogeneous with the T2SL absorber layer in order to resolve these drawbacks of the AlGaSb barrier. The lattice mismatch of the T2SL barrier was smaller than that of the AlGaSb barrier. At − 70 m V and 80 K, the dark current density and the noise equivalent temperature difference of the nBn devices with the T2SL barrier were 4.4 × 1 0 − 6 A / c m 2 and 33 mK, respectively.
- Subjects :
- Materials science
business.industry
Superlattice
Photodetector
Chemical vapor deposition
Noise-equivalent temperature
Atomic and Molecular Physics, and Optics
Barrier layer
chemistry.chemical_compound
Optics
chemistry
Physical vapor deposition
Optoelectronics
Indium arsenide
business
Dark current
Subjects
Details
- ISSN :
- 15394794 and 01469592
- Volume :
- 46
- Database :
- OpenAIRE
- Journal :
- Optics Letters
- Accession number :
- edsair.doi.dedup.....8fe4dc0b2e02dea34e7d5888356cdd26
- Full Text :
- https://doi.org/10.1364/ol.435479