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Boron Emitter Formation by Plasma Immersion Ion Implantation in n-type PERT Silicon Solar Cells
- Source :
- Energy Procedia. 92:697-701
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- The use of plasma immersion ion implantation (PIII) is a relevant approach for the development of advanced solar cells technologies at lower cost (€/W p ). In this paper, we report on the development of homogeneous boron (B) doping of n-type crystalline silicon (cSi) substrate by the PIII technique. Using diborane (B 2 H 6 ) as gas precursor, various doping profiles were identified fitting the requirements for boron-doped emitters in n-type PERT solar cells. Particularly, saturation current density (J 0e ) of 50 fA/cm 2 were achieved on symmetrical samples for a 94 Ω/sg textured B-emitter passivated with SiO 2 /SiN stack. Bifacial n-type Passivated Emitter Rear Totally-diffused (n-PERT) solar cells were fabricated using the PIII technology and conversion efficiencies up to 19.8% on 239 cm 2 Cz-Si wafers were obtained. As a consequence, these results indicate that PIII can compete with beamline technology but will have lower running cost. It is therefore a promising technology to create high efficiency cSi solar cells.
- Subjects :
- thermal annealing
Materials science
Silicon
chemistry.chemical_element
Nanotechnology
doping
02 engineering and technology
Substrate (electronics)
01 natural sciences
Energy(all)
0103 physical sciences
ion implantation
Wafer
Crystalline silicon
Boron
010302 applied physics
business.industry
Doping
phosphorus BSF
021001 nanoscience & nanotechnology
Plasma-immersion ion implantation
n-type silicon
Ion implantation
plasma immersion
chemistry
solar cells
boron emitter
PERT
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 18766102
- Volume :
- 92
- Database :
- OpenAIRE
- Journal :
- Energy Procedia
- Accession number :
- edsair.doi.dedup.....90c7226a7df21cbbde7510e0ea582ebe
- Full Text :
- https://doi.org/10.1016/j.egypro.2016.07.046