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Bandgap Tunability in Zn(Sn,Ge)N2Semiconductor Alloys
- Source :
- Advanced Materials. 26:1235-1241
- Publication Year :
- 2013
- Publisher :
- Wiley, 2013.
-
Abstract
- ZnSn_(1-x)Ge_xN_2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN_2) to 3.1 eV (ZnGeN_2) by control of the Sn/Ge ratio.
Details
- ISSN :
- 09359648
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- Advanced Materials
- Accession number :
- edsair.doi.dedup.....91182fde5af5a881c868a484ae8dbb5d