Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON

MLA

Hironori Inoue, et al. “Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON.” Japanese Journal of Applied Physics, vol. 41, Apr. 2002, pp. 2468–71. EBSCOhost, https://doi.org/10.1143/jjap.41.2468.

APA

Hironori Inoue, Masanobu Miyao, Akihiro Miyauchi, Fitrianto, Taizoh Sadoh, & Atsushi Kenjo. (2002). Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON. Japanese Journal of Applied Physics, 41, 2468–2471. https://doi.org/10.1143/jjap.41.2468

Chicago

Hironori Inoue, Masanobu Miyao, Akihiro Miyauchi, Fitrianto, Taizoh Sadoh, and Atsushi Kenjo. 2002. “Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON.” Japanese Journal of Applied Physics 41 (April): 2468–71. doi:10.1143/jjap.41.2468.