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Observation of Resonant Impurity States in Semiconductor Quantum-Well Structures
- Source :
- Physical Review Letters. 54:2623-2626
- Publication Year :
- 1985
- Publisher :
- American Physical Society (APS), 1985.
-
Abstract
- Resonant Raman scattering experiments on GaAs(Si doped)-${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ quantum-well structures show transitions involving the ground state of the donors and narrow resonant donor states derived from higher conduction subbands. These new impurity-related features, which occur at slightly higher energies than the associated conduction intersubband excitations, have been studied as a function of power density, temperature, and well width.
- Subjects :
- Photoluminescence
Materials science
Condensed matter physics
Solid-state physics
business.industry
General Physics and Astronomy
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
symbols.namesake
Semiconductor
Impurity
symbols
Atomic physics
Raman spectroscopy
Ground state
business
Raman scattering
Quantum well
Subjects
Details
- ISSN :
- 00319007
- Volume :
- 54
- Database :
- OpenAIRE
- Journal :
- Physical Review Letters
- Accession number :
- edsair.doi.dedup.....91c1ba447c1005bb58ba1103c82b64dc