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Twist-Angle-Dependent Optoelectronics in a Few-Layer Transition-Metal Dichalcogenide Heterostructure
- Source :
- ACS Applied Materials & Interfaces. 11:2470-2478
- Publication Year :
- 2018
- Publisher :
- American Chemical Society (ACS), 2018.
-
Abstract
- Lattice matching has been supposed to play an important role in the coupling between two materials in a vertical heterostructure (HS). To investigate this role, we fabricated a heterojunction device with a few layers of p-type WSe2 and n-type MoSe2 with different crystal orientation angles. The crystal orientations of WSe2 and MoSe2 were estimated using high-resolution X-ray diffraction. Heterojunction devices were fabricated with twist angles of 0, 15, and 30°. The I–V curve of the sample with the twist angle of 0° under the dark condition showed a diodelike behavior. The strong coupling due to lattice matching caused a well-established p–n junction. In cases of 15 and 30° samples, the van der Waals gap was built because of lattice mismatching, which resulted in the formation of a potential barrier. However, when the light-emitting diode light of 365 nm (3.4 eV) was illuminated, it was possible for excited electrons and holes to jump beyond the potential barrier and the current flowed well in both forwar...
- Subjects :
- Diffraction
Materials science
Condensed matter physics
Heterojunction
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
symbols.namesake
Excited state
Lattice (order)
0103 physical sciences
symbols
Rectangular potential barrier
General Materials Science
van der Waals force
010306 general physics
0210 nano-technology
p–n junction
Diode
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 11
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi.dedup.....91e6884853c7f15112fe9b83e00fca4f