Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

MLA

Natsuko Aota, et al. “Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing.” Japanese Journal of Applied Physics, vol. 51, Jan. 2012, p. 016504. EBSCOhost, https://doi.org/10.7567/jjap.51.016504.

APA

Natsuko Aota, Koji Koyama, Hideo Aida, & Hidetoshi Takeda. (2012). Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing. Japanese Journal of Applied Physics, 51, 016504. https://doi.org/10.7567/jjap.51.016504

Chicago

Natsuko Aota, Koji Koyama, Hideo Aida, and Hidetoshi Takeda. 2012. “Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing.” Japanese Journal of Applied Physics 51 (January): 016504. doi:10.7567/jjap.51.016504.