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Development of All-Around SiO2/Al2O3 Gate, Suspended Silicon Nanowire Chemical Field Effect Transistors Si-nw-ChemFET
- Source :
- Proceedings, Vol 1, Iss 4, p 419 (2017), EUROSENSORS XXXI, EUROSENSORS XXXI, Sep 2017, Paris, France
- Publication Year :
- 2017
- Publisher :
- MDPI, 2017.
-
Abstract
- International audience; We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and " low cost " standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.
- Subjects :
- 0209 industrial biotechnology
Materials science
Fabrication
Silicon
potentiometric sensor
microfluidics
Nanowire
chemistry.chemical_element
lcsh:A
Nanotechnology
02 engineering and technology
biosensor
01 natural sciences
law.invention
MOSFET
020901 industrial engineering & automation
microsensor
Nanosensor
law
silicon nanowire
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Thermal oxidation
pH measurement
010401 analytical chemistry
0104 chemical sciences
ChemFET
gate all-around
finFET
chemistry
Field-effect transistor
nanosensor
ISFET
lcsh:General Works
Photolithography
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017
- Accession number :
- edsair.doi.dedup.....9205ac5e546f7fc000096f3193285012