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High pressure Raman studies on the structural conformation of oligophenyls
- Source :
- ResearcherID, Peter Puschnig
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Abstract
- The goal of this combined experimental and computational study is to investigate the structural conformation of oligo( para -phenylenes) in the crystalline phase, in particular the planarity of this type of molecules. To this end we have performed Raman experiments on para -terphenyl and para -quaterphenyl in a pressure range from 0 to 70 kbar and at temperatures from 10 to 300 K. The positions and the relative intensities of the C–C interring stretch mode at 1280 cm −1 and the C–H in-plane bend mode at 1220 cm −1 have been tracked. We find that upon increasing temperature at ambient pressure the intensity ratio I 1280 / I 1220 drops rapidly at temperatures that coincide with the crystallographic phase transition for the investigated materials. At ambient temperature also, this intensity ratio drops rapidly upon increasing pressure up to about 15 kbar. In the computational part, the Raman frequencies and activities of isolated 3P and 4P molecules were calculated within restricted Hartree–Fock formalism with the interring tilt angles varying from 0 to 90°. These calculations confirm that the I 1280 / I 1220 intensity ratio can be related to the planarity of the molecules. Three-dimensional bandstructure calculations within density functional theory were applied to determine phonon frequencies and estimate Raman activities for the polymer poly( para -phenylene). These simulations show that the same conclusions hold for crystalline environment.
- Subjects :
- Phonon
Chemistry
Mechanical Engineering
Metals and Alloys
Condensed Matter Physics
Molecular physics
Planarity testing
Electronic, Optical and Magnetic Materials
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Mechanics of Materials
Computational chemistry
Ab initio quantum chemistry methods
Phenylene
Materials Chemistry
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Density functional theory
Raman spectroscopy
Raman scattering
Ambient pressure
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Details
- Database :
- OpenAIRE
- Journal :
- ResearcherID, Peter Puschnig
- Accession number :
- edsair.doi.dedup.....93600a2c8e21706a6ae2c0a5e7bf5a54