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Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2
- Source :
- AIP Advances, Vol 10, Iss 5, Pp 055307-055307-7 (2020)
- Publication Year :
- 2020
- Publisher :
- AIP Publishing, 2020.
-
Abstract
- Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular beam epitaxy. Each sample displayed negative differential resistance (NDR) at room temperature. The figures-of-merit quantified were peak-to-valley current ratio (PVCR), yield of the device with room-temperature NDR, and peak current density (Jp). The figures-of-merit demonstrate an inverse relationship between PVCR/yield and Jp over this growth temperature series. X-ray diffraction and transmission electron microscopy were used to determine the growth rates, and layer thicknesses were used to explain the varying figures-of-merit. Due to the high yield of devices grown at 760 °C and 810 °C, the PVCR, peak voltage (Vp), and Jp were plotted vs device area, which demonstrated high uniformity and application tunability. Peak current densities of up to 1.01 MA/cm2 were observed for the sample grown at 900 °C. publishedVersion
- Subjects :
- 010302 applied physics
Diffraction
Yield (engineering)
Materials science
213 Electronic, automation and communications engineering, electronics
Analytical chemistry
Resonant-tunneling diode
General Physics and Astronomy
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
01 natural sciences
lcsh:QC1-999
Transmission electron microscopy
0103 physical sciences
0210 nano-technology
lcsh:Physics
Quantum tunnelling
Diode
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 21583226
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- AIP Advances
- Accession number :
- edsair.doi.dedup.....94538c24bcebfb0c3a619929e287b796