Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films

Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200 °C due to the low Curie temperature of the piezoelectric material. Strengthening the piezoelectric coupling of high-temperature piezoelectric materials, such as La2Ti2O7 (LTO), would allow sensors to operate across a broad temperature range. The crystalline orientation and piezoelectric coupling direction of LTO thin films can be controlled by epitaxial matching to SrTiO3(001), SrTiO3(110), and rutile TiO2(110) substrates via pulsed laser deposition. The structure and phase purity of the films are investigated by x-ray diffraction and scanning transmission electron microscopy. Piezoresponse force microscopy is used to measure the in-plane and out-of-plane piezoelectric coupling in the films. The strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO2(110) results in epitaxial La2/3TiO3, an orthorhombic perovskite of interest as a microwave dielectric material and an ion conductor. La2/3TiO3 can be difficult to stabilize in bulk form, and epitaxial stabilization on TiO2(110) is a promising route to realize La2/3TiO3 for both fundamental studies and device applications. Overall, these results confirm that control of the crystalline orientation of epitaxial LTO-based materials can govern the resulting functional properties.