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N–H related defects in GaAsN grown through chemical beam epitaxy
- Source :
- Japanese Journal of Applied Physics
- Publication Year :
- 2014
-
Abstract
- The local vibration modes of N–H related defects in GaAsN are studied using isotopes. When GaAsN is grown through chemical beam epitaxy (CBE) using triethylgallium/tris(dimethylamino)arsenic/monomethylhydrazine gas, there are several local vibration modes (LVMs) in Fourier transform infrared (FTIR) spectra. Signals with stretching mode peaks at 2952, 3098, and 3125 cm−1 are reported, along with new wagging and stretching mode peaks at 960 and 3011 cm−1, which exist only in crystals grown through CBE. When the film is grown using deuterated MMHy as a nitrogen source, new peaks at 2206, 2302, 2318, 2245, and 714 cm−1 appear. This suggests that D related defects are created because of the deuterated MMHy. The ratios of frequencies of these new peaks to those obtained from crystals grown using MMHy are nearly 1.34. This suggests that all defects in GaAsN grown through CBE, which appear as LVMs, are N–H related defects. Especially, those with LVMs at 960 and 3011 cm−1 are new N–H defects only found in GaAsN grown through CBE.
- Subjects :
- 010302 applied physics
Infrared
General Engineering
Analytical chemistry
General Physics and Astronomy
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Spectral line
Chemical beam epitaxy
Monomethylhydrazine
chemistry.chemical_compound
Crystallography
chemistry
Deuterium
Normal mode
0103 physical sciences
Triethylgallium
Fourier transform infrared spectroscopy
0210 nano-technology
Subjects
Details
- Language :
- English
- ISSN :
- 13474065 and 00214922
- Volume :
- 53
- Issue :
- 3
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....9619c0c02c801243f06c2dcd75b44e90
- Full Text :
- https://doi.org/10.7567/JJAP.53.031001