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N–H related defects in GaAsN grown through chemical beam epitaxy

Authors :
Hidetoshi Suzuki
Masafumi Yamaguchi
Kazuma Ikeda
Tomohiro Tanaka
Makoto Inagaki
Hideaki Machida
Yoshio Ohshita
Takahiko Honda
Hiroshi Sudoh
Source :
Japanese Journal of Applied Physics
Publication Year :
2014

Abstract

The local vibration modes of N–H related defects in GaAsN are studied using isotopes. When GaAsN is grown through chemical beam epitaxy (CBE) using triethylgallium/tris(dimethylamino)arsenic/monomethylhydrazine gas, there are several local vibration modes (LVMs) in Fourier transform infrared (FTIR) spectra. Signals with stretching mode peaks at 2952, 3098, and 3125 cm−1 are reported, along with new wagging and stretching mode peaks at 960 and 3011 cm−1, which exist only in crystals grown through CBE. When the film is grown using deuterated MMHy as a nitrogen source, new peaks at 2206, 2302, 2318, 2245, and 714 cm−1 appear. This suggests that D related defects are created because of the deuterated MMHy. The ratios of frequencies of these new peaks to those obtained from crystals grown using MMHy are nearly 1.34. This suggests that all defects in GaAsN grown through CBE, which appear as LVMs, are N–H related defects. Especially, those with LVMs at 960 and 3011 cm−1 are new N–H defects only found in GaAsN grown through CBE.

Details

Language :
English
ISSN :
13474065 and 00214922
Volume :
53
Issue :
3
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi.dedup.....9619c0c02c801243f06c2dcd75b44e90
Full Text :
https://doi.org/10.7567/JJAP.53.031001