Back to Search
Start Over
Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT
- Source :
- 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
- Publication Year :
- 2019
- Publisher :
- IEEE, 2019.
-
Abstract
- Negative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures. The required self-turn-on-free criteria were verified experimentally.<br />31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2019), 19-23 May 2019, Shanghai, China
- Subjects :
- 010302 applied physics
Materials science
gate shielding layer
business.industry
020208 electrical & electronic engineering
scaled IGBT
Biasing
02 engineering and technology
Insulated-gate bipolar transistor
Hardware_PERFORMANCEANDRELIABILITY
Gate voltage
01 natural sciences
self-turn-on
0103 physical sciences
Turn (geometry)
0202 electrical engineering, electronic engineering, information engineering
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
business
Hardware_LOGICDESIGN
Subjects
Details
- Language :
- English
- ISSN :
- 19460201
- Database :
- OpenAIRE
- Journal :
- 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Accession number :
- edsair.doi.dedup.....96679af157a95d682b9a06f9a57da3d8