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A resonant spin lifetime transistor

Authors :
Cartoixà Soler, Xavier
Ting, David Z. -Y.
Chang, Y. -C.
American Physical Society
Source :
Recercat: Dipósit de la Recerca de Catalunya, Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya), Dipòsit Digital de Documents de la UAB, Universitat Autònoma de Barcelona, Recercat. Dipósit de la Recerca de Catalunya, instname
Publication Year :
2003

Abstract

We present a device concept for a spintronic transistor based on the spin relaxation properties a two-dimensional electron gas (2DEG). The device design is very similar to that of the Datta and Das spin transistor. However, our proposed device works in the diffusive regime rather than in the ballistic regime. This eases lithographical and processing requirements. The switching action is achieved through the biasing of a gate contact, which controls the lifetime of spins injected into the 2DEG from a ferromagnetic emitter, thus allowing the traveling spins to be either aligned with a ferromagnetic collector or randomizing them before collection. The device configuration can easily be turned into a memory and a readout head for magnetically stored information.

Details

Language :
English
Database :
OpenAIRE
Journal :
Recercat: Dipósit de la Recerca de Catalunya, Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya), Dipòsit Digital de Documents de la UAB, Universitat Autònoma de Barcelona, Recercat. Dipósit de la Recerca de Catalunya, instname
Accession number :
edsair.doi.dedup.....969a57f6f2d95151aab13736e0d0af7c