TCAD predictions of hot-electron injection in p-type LDMOS transistors

The hole impact-ionization coefficient and the hot-electron injection model presently available in the Synopsys TCAD tool have been calibrated, as a necessary step towards the possibility to predict the long-term reliability of the new generation p-channel power LDMOS devices integrated in BCD technology. First, the models have been calibrated on ad-hoc test structures such as p-channel MOSFETs with separated source and body contacts and n-channel MOSFETs with an additional sub-surface emitter region in order to have direct access to the experimental characterization of the impact-ionization under hole avalanche regime and of the hot-electron injection, respectively. Then, the calibrated models have been validated on p-channel power LDMOS featuring the STI architecture. The proposed TCAD approach accurately captures the relevant effects over an extended range of electric fields.