Cite
Light‐Driven WSe2‐ZnO Junction Field‐Effect Transistors for High‐Performance Photodetection
MLA
Yang Xu, et al. “Light‐Driven WSe2‐ZnO Junction Field‐Effect Transistors for High‐Performance Photodetection.” Advanced Science, vol. 7, no. 1, Nov. 2019. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....991511ad3d7a618374e3d0547c3cdf3d&authtype=sso&custid=ns315887.
APA
Yang Xu, Weida Hu, Yi Jia, Chongxin Shan, Man Luo, Fang Wang, Qing Li, Nan Guo, Yang Wang, Yang Wu, Huicong Chang, Fan Gong, Junku Liu, Peng Zhou, & Lin Xiao. (2019). Light‐Driven WSe2‐ZnO Junction Field‐Effect Transistors for High‐Performance Photodetection. Advanced Science, 7(1).
Chicago
Yang Xu, Weida Hu, Yi Jia, Chongxin Shan, Man Luo, Fang Wang, Qing Li, et al. 2019. “Light‐Driven WSe2‐ZnO Junction Field‐Effect Transistors for High‐Performance Photodetection.” Advanced Science 7 (1). http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....991511ad3d7a618374e3d0547c3cdf3d&authtype=sso&custid=ns315887.