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A sub-ns time-gated CMOS single photon avalanche diode detector for Raman spectroscopy
- Source :
- Nissinen, I, Nissinen, J, Länsman, A-K, Hallman, L, Kilpelä, A, Kostamovaara, J, Kögler, M, Aikio, M & Tenhunen, J 2011, A Sub-ns Time-gated CMOS Single Photon Avalanche Diode Detector for Raman Spectroscopy . in 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) . pp. 375-378, European Solid-State Device Research Conference, ESSDERC 2011, Helsinki, Finland, 12/09/11 . https://doi.org/10.1109/ESSDERC.2011.6044156
- Publication Year :
- 2011
- Publisher :
- IEEE, 2011.
-
Abstract
- A time-gated single photon avalanche diode (SPAD) has been designed and fabricated in a standard high voltage 0.35 μm CMOS technology for Raman spectroscopy. The sub-ns time gating window is used to suppress the fluorescence background typical of Raman studies, and also to minimize the dark count rate in order to maximize the signal-to-noise ratio of the Raman signal. The proposed time-gating technique is applied for measuring the Raman spectra of olive oil with a gate window of 300 ps, and shows significant fluorescence suppression.
Details
- Database :
- OpenAIRE
- Journal :
- 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
- Accession number :
- edsair.doi.dedup.....9a49329cfeb17348fb8d4e264c5dc29f
- Full Text :
- https://doi.org/10.1109/essderc.2011.6044156