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Controlled Manipulation and Multiscale Modeling of Suspended Silicon Nanostructures under Site-Specific Ion Irradiation

Authors :
Bhaveshkumar Kamaliya
Vivek Garg
Jing Fu
Rakesh G. Mote
Ritesh Kumar Singh
Ajay S. Panwar
Source :
ACS Applied Materials & Interfaces. 12:6581-6589
Publication Year :
2020
Publisher :
American Chemical Society (ACS), 2020.

Abstract

In this work, controlled bidirectional deformation of suspended nanostructures by site-specific ion irradiation is presented. Multiscale modeling of the bidirectional deformation of nanostructures by site-specific ion irradiation is presented, incorporating molecular dynamics (MD) simulations together with finite element analysis, to substantiate the bending mechanism. Strain engineering of the free-standing nanostructure is employed for controlled deformation through site-specific kiloelectronvolt ion irradiation experimentally using a focused ion beam. We report the detailed bending mechanism of suspended silicon (Si) nanostructures through ion-induced irradiations. MD simulations are presented to understand the ion-solid interactions, defects formation in the silicon nanowire. The atomic-scale simulations reveal that the ion irradiation-induced bidirectional bending occurs through the development of localized tensile-compressive stresses in the lattice due to defect formation associated with atomic displacements. With an increasing ion dose, the evolution of localized tensile to compressive stress is observed, developing the alternate bending directions calculated through finite element analysis. The findings of multiscale modeling are in excellent agreement with the bidirectional nature of bending observed through the experiments. The developed in situ approach for bidirectional controlled manipulation of nanostructures in this work can be used for nanofabrication of numerous novel three-dimensional configurations and can provide a route toward functional nanostructures and devices.

Details

ISSN :
19448252 and 19448244
Volume :
12
Database :
OpenAIRE
Journal :
ACS Applied Materials & Interfaces
Accession number :
edsair.doi.dedup.....9cbb14c585a0b27eec788e040624c3af
Full Text :
https://doi.org/10.1021/acsami.9b17941