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A versatile photodetector assisted by photovoltaic and bolometric effects
- Source :
- Light, Science & Applications, Light: Science & Applications, Vol 9, Iss 1, Pp 1-9 (2020)
- Publication Year :
- 2020
-
Abstract
- The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors. However, the limited exploitation of basic properties makes it difficult for devices to stand out. Here, we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake. Vanadium dioxide is a classical semiconductor with a narrow bandgap, a high temperature coefficient of resistance, and phase transformation. Molybdenum ditelluride, a typical two-dimensional material, is often used to construct optoelectronic devices. The heterostructure can realize three different functional modes: (i) the p–n junction exhibits ultrasensitive detection (450 nm–2 μm) with a dark current down to 0.2 pA and a response time of 17 μs, (ii) the Schottky junction works stably under extreme conditions such as a high temperature of 400 K, and (iii) the bolometer shows ultrabroad spectrum detection exceeding 10 μm. The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation (LWIR). This type of photodetector combines versatile detection modes, shedding light on the hybrid application of novel and traditional materials, and is a prototype of advanced optoelectronic devices.<br />Optoelectronics: lighting the way to advanced photodetectors Scientists from China have made photodetectors from semiconducting and two-dimensional materials that could lay the foundations for advanced optoelectronic devices. Photodetectors made from two-dimensional semiconducting materials such as quantum dots, nanowires, nanoflakes, and nanofilms have led to smaller devices that exhibit ultrafast response times, exceptional sensitivity, or a broad-spectrum response compared to devices made from traditional materials. Currently, however, no device can combine all these attributes. A team of Chinese researchers led by Jianlu Wang from the Shanghai Institute of Technical Physics has now developed a hybrid photodetector made from an ultrathin film of vanadium dioxide and a molybdenum telluride nanoflake. The photodetector combines a rapid response with high sensitivity and is capable of detecting visible to longwave infrared radiation, paving the way for better-performing devices for use in a range of optoelectronic applications.
- Subjects :
- lcsh:Applied optics. Photonics
Materials science
Infrared
Band gap
Schottky barrier
Photodetector
02 engineering and technology
010402 general chemistry
01 natural sciences
Article
law.invention
law
lcsh:QC350-467
business.industry
Optoelectronic devices and components
Bolometer
lcsh:TA1501-1820
Imaging and sensing
Heterojunction
021001 nanoscience & nanotechnology
Atomic and Molecular Physics, and Optics
0104 chemical sciences
Electronic, Optical and Magnetic Materials
Semiconductor
Optoelectronics
0210 nano-technology
business
lcsh:Optics. Light
Dark current
Subjects
Details
- ISSN :
- 20477538
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- Light, scienceapplications
- Accession number :
- edsair.doi.dedup.....9d05ec28a48ea83c64e14bf9facdc7ca