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Self-assembled gold silicide wires on bromine-passivated Si(110) surfaces
- Source :
- Scopus-Elsevier
- Publication Year :
- 2000
- Publisher :
- American Vacuum Society, 2000.
-
Abstract
- Thin Au films (∼45 nm) deposited by thermal evaporation under high vacuum on bromine-passivated Si(110) substrates, upon annealing showed the formation of long gold silicide wire-like islands on top of a thin uniform layer of gold silicide in a self-assembled Stranski–Krastanov growth process. Optical micrographs showed long, straight and narrow islands with aspect ratios as large as 200:1. Scanning electron microscopy images revealed the presence of facets. The islands are aligned along the [110] direction on the Si(110) surface. Rutherford backscattering spectrometry measurements with an ion microbeam identified the islands to possess varying thickness across a single island as one would expect for islands having facets and also showed the uniform silicide layer over the Si substrate to be very thin (∼1.5 nm). The observed alignment of the gold silicide islands on the Si(110) surface has been explained in terms of the lattice mismatch between gold–silicide and silicon and invoking the theory of shape t...
- Subjects :
- Materials science
Bromine
Silicon
Annealing (metallurgy)
business.industry
Scanning electron microscope
Ultra-high vacuum
General Engineering
chemistry.chemical_element
Nanotechnology
Rutherford backscattering spectrometry
chemistry.chemical_compound
chemistry
Silicide
Optoelectronics
Self-assembly
business
Subjects
Details
- ISSN :
- 0734211X
- Volume :
- 18
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Accession number :
- edsair.doi.dedup.....9d63dd1bc7cb3ac7d8979930818293cb