Breakdown properties of multiguarded devices

Multiguard structures are used in order to enhance the breakdown voltage of microstrip detectors. In this work we studied the electrical properties of devices designed in four different layouts on n-Si substrates, based on a central diode surrounded by various p/sup +/ and/or n/sup +/ floating rings. In particular we measured the main DC characteristics and we compared the experimental results with those simulated by a two-dimensional drift-diffusion computer model. The device noise was also measured for the central diode as a function of the applied voltage. We repeated all measurements after neutron and gamma irradiation, in view of the application of these devices to silicon microstrip detectors for future high energy physics experiments. For example at the LHC the level of radiation damage expected during the detector lifetime implies very high bias voltages for the detector operation. Multiguards can offer a solution, provided the design optimisation takes into account the radiation effects.