Evidence of electron-phonon interaction on transport in n- and p-type silicon nanowires

Authors :: Bruno Grandidier
François Vaurette
J.P. Nys
Dominique Deresmes
D. Stievenard
Renaud Leturcq
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2008, 92, pp.242109-1-3. ⟨10.1063/1.2949072⟩, Applied Physics Letters, 2008, 92, pp.242109-1-3. ⟨10.1063/1.2949072⟩
Publication Year :: 2008
Publisher :: HAL CCSD, 2008.
Abstract: The authors studied the transport in n- and p-type silicon nanowires. When the temperature decreases from 325to75K, they observed a variation of the nanowire resistance, consistent with a transport governed by electron-phonon scattering. The lateral size of the nanowire down to 25nm is not found to cause further surface scattering, due to the presence of interface states which create a depleted region in the nanowires. Such depleted region allows thus to keep a carrier mobility in the nanowires similar to the bulk one.

Language :: English
ISSN :: 00036951
Database :: OpenAIRE
Journal :: Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2008, 92, pp.242109-1-3. ⟨10.1063/1.2949072⟩, Applied Physics Letters, 2008, 92, pp.242109-1-3. ⟨10.1063/1.2949072⟩
Accession number :: edsair.doi.dedup.....9dd48b6d020cc004388cfea3e14092c8
Full Text :: https://doi.org/10.1063/1.2949072⟩

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