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Influence of topography on the scratch and mar visibility resistance of randomly micro-textured surfaces

Authors :
Miguel Sánchez-Soto
M. Ll. Maspoch
P. Gamonal-Repiso
S. Santos-Pinto
Universitat Politècnica de Catalunya. Doctorat en Ciència i Enginyeria dels Materials
Universitat Politècnica de Catalunya. Departament de Ciència i Enginyeria de Materials
Universitat Politècnica de Catalunya. e-PLASCOM - Plàstics i Compòsits Ecològics
Source :
UPCommons. Portal del coneixement obert de la UPC, Universitat Politècnica de Catalunya (UPC), Recercat. Dipósit de la Recerca de Catalunya, instname
Publication Year :
2019
Publisher :
Elsevier, 2019.

Abstract

In this research, the influence of the macro- and micro-topography on randomly micro-textured polypropylene surfaces has been studied. An initial characterization of the underlying surface was carried out using three-dimensional (3D) technologies such as chromatic and white light confocal microscopy. A multi-scale analysis methodology was employed for analysing the surface at either macro- or micro-scales. Among others, topographic characteristics such as peak-to-valley symmetry and the amount of micro-asperities were analysed to quantitatively determine the scratch and mar visibility resistance. The results show that surfaces with higher symmetry in their functional height distributions yield lower lightness variation (¿L*) between the scratch pattern and its residual background height (RBH). This allows for a better suitability in hiding the scratch damage. On the other hand, topographies with less amount of micro-asperities on top of the texture provided a better mar resistance. In these cases, deformation mechanisms such as ironing are minimized, resulting in a lower gloss variation and lower contrast between the damaged area and its surroundings.

Details

Language :
English
Database :
OpenAIRE
Journal :
UPCommons. Portal del coneixement obert de la UPC, Universitat Politècnica de Catalunya (UPC), Recercat. Dipósit de la Recerca de Catalunya, instname
Accession number :
edsair.doi.dedup.....9dd69d401967d9e4335ab3b6206a6fc8