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New method to induce 2D–3D transition of strained CdSe/ZnSe layers
- Source :
- Physica E: Low-dimensional Systems and Nanostructures, Physica E: Low-dimensional Systems and Nanostructures, 26 (1-4), pp.119-123, 2005, ⟨10.1016/j.physe.2004.08.036⟩, Physica E: Low-dimensional Systems and Nanostructures, 2005, 26 (1-4), pp.119-123. ⟨10.1016/j.physe.2004.08.036⟩, Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2005, 26 (1-4), pp.119-123. ⟨10.1016/j.physe.2004.08.036⟩
- Publication Year :
- 2005
- Publisher :
- Elsevier BV, 2005.
-
Abstract
- We present new growth conditions for growing high-quality CdSe/ZnSe quantum dots with photoluminescence emission measurable up to room temperature. The surface morphology is characterized in situ by Reflective High Energy Electron Diffraction (RHEED). The key point is the introduction of a new step in the growth process using amorphous selenium to induce a 2D–3D transition of a CdSe strained layer on ZnSe to form the dots. Optical characterizations by photoluminescence of CdSe/ZnSe quantum dots obtained that way, as well as X-ray diffraction results are also discussed here.
- Subjects :
- [PHYS]Physics [physics]
010302 applied physics
Diffraction
High energy
Photoluminescence
Reflection high-energy electron diffraction
Materials science
business.industry
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Optics
Electron diffraction
Quantum dot
0103 physical sciences
Optoelectronics
Amorphous selenium
0210 nano-technology
business
Layer (electronics)
ComputingMilieux_MISCELLANEOUS
Subjects
Details
- ISSN :
- 13869477
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- Physica E: Low-dimensional Systems and Nanostructures
- Accession number :
- edsair.doi.dedup.....9e5cdc83d5d53d15fc99c427de201f1a