Stack capacitor integration with buried oxygen barrier using chemical mechanical polishing of noble metals

A novel integration scheme for the formation of stack capacitor electrodes and diffusion barriers is presented. The concept makes use of chemical mechanical polishing of noble metals and allows the integration of a dielectric barrier. Electrical data is presented showing excellent parametric yield of contact resistance comparable to standard integration using RIE. Based on the data presented, a variety of new integration schemes for new materials can be deducted.