Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs

Authors :: T.A. Oproglidis
D. H. Tassis
Christoforos G. Theodorou
C.A. Dimitriadis
Gerard Ghibaudo
A. Tsormpatzoglou
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )
Université Grenoble Alpes (UGA)
Source :: Solid-State Electronics, Solid-State Electronics, Elsevier, 2021, 175, pp.107945. ⟨10.1016/j.sse.2020.107945⟩
Publication Year :: 2021
Publisher :: HAL CCSD, 2021.
Abstract: In this work, a continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs is presented, valid in all regions of operation. Initially, the expressions of the gate, drain and source total charges are analytically derived based on a continuous and symmetric drain current compact model already developed. Then, the intrinsic capacitances are calculated via the differentiation of the terminal charges, verified against TCAD simulation data. The AC symmetry tests of the trans-capacitance compact model are thoroughly investigated.

Language :: English
ISSN :: 00381101
Database :: OpenAIRE
Journal :: Solid-State Electronics, Solid-State Electronics, Elsevier, 2021, 175, pp.107945. ⟨10.1016/j.sse.2020.107945⟩
Accession number :: edsair.doi.dedup.....a2bbf483686335151f4c5870e4b60be4

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