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Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime
- Source :
- IEEE Transactions on Electron Devices. 60:3718-3725
- Publication Year :
- 2013
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2013.
-
Abstract
- We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
- Subjects :
- Silicon photonics
Materials science
Silicon
Physics::Instrumentation and Detectors
business.industry
Hybrid silicon laser
chemistry.chemical_element
Settore ING-INF/02 - Campi Elettromagnetici
Optical power
Substrate (electronics)
Settore ING-INF/01 - Elettronica
Electronic, Optical and Magnetic Materials
Responsivity
Optics
Silicon photomultiplier
chemistry
Optoelectronics
Continuous wave
Avalanche photodiode (APD), photodetector, responsivity, silicon photomultiplier (SiPM), single-photon avalanche diode (SPAD)
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 60
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi.dedup.....a2bf012df83d842589342b8817137a66