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Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Authors :
Hannah J. Joyce
Yun-Young Kim
Xin Zhang
Chennupati Jagadish
Jan M. Yarrison-Rice
Suriati Paiman
Howard E. Jackson
Leigh M. Smith
Qiang Gao
H.H. Tan
Jin Zou
Publication Year :
2016

Abstract

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group. © 2009 IEEE.

Subjects

Subjects :
Materials science
business.industry
Nanowire
Semiconductor device
Chemical vapor deposition
Epitaxy
Gallium arsenide
chemistry.chemical_compound
Semiconductor
chemistry
Indium phosphide
Optoelectronics
Metalorganic vapour phase epitaxy
business

Details

Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....a2d32617cd9463c1db012262b0e029f6

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