Influence of series resistance on the experimental extraction of FinFET noise parameters

International audience; In this paper we demonstrate for the first time how the series resistance of an advanced CMOS device, such as the FinFET, can lead to an incorrect extraction of low-frequency noise parameters. In particular, the use of the carrier number fluctuations with correlated mobility fluctuations model is shown to be very sensitive to the transistor series resistance. We demonstrate how the classic fitting methods can lead to an underestimated value in the extraction of the mobility fluctuations factor Ω. Furthermore, we present an original method for suppressing this effect, by taking advantage of the series resistance immune Y-function.