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Growth and Characterization of AlGaN/GaN Superlattices

Growth and Characterization of AlGaN/GaN Superlattices

Authors :
W. V. Lundin
D. V. Pakhnin
V. Yu. Davydov
Andrey F. Tsatsulnikov
R. N. Kyutt
A. S. Usikov
A. I. Besulkin
E. E. Zavarin
V. V. Tret’yakov
A. V. Sakharov
M. F. Kokorev
Source :
ResearcherID
Publication Year :
2001
Publisher :
Wiley, 2001.

Abstract

A set of AlGaN/GaN superlattices (SLs) with various periods (5-40 nm) and various composition of barriers and buffer layers was grown by MOCVD on sapphire substrates. The aluminum incorporation depending on growth rate was investigated. It was observed that for growth of AlGaN layers with AlN mole fraction above 15-20% the growth rate must be significantly reduced to avoid aluminum incorporation saturation. Structures were studied by X-ray diffraction, Raman scattering, and optical absorption spectroscopy. A significant red-shift of absorption edge was observed for SLs with period of 10-40 nm.

Details

ISSN :
1521396X and 00318965
Volume :
188
Database :
OpenAIRE
Journal :
physica status solidi (a)
Accession number :
edsair.doi.dedup.....a42f342d14035e4abddf83fb5a535b5a
Full Text :
https://doi.org/10.1002/1521-396x(200112)188:2<885::aid-pssa885>3.0.co;2-k