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Growth and Characterization of AlGaN/GaN Superlattices
Growth and Characterization of AlGaN/GaN Superlattices
- Source :
- ResearcherID
- Publication Year :
- 2001
- Publisher :
- Wiley, 2001.
-
Abstract
- A set of AlGaN/GaN superlattices (SLs) with various periods (5-40 nm) and various composition of barriers and buffer layers was grown by MOCVD on sapphire substrates. The aluminum incorporation depending on growth rate was investigated. It was observed that for growth of AlGaN layers with AlN mole fraction above 15-20% the growth rate must be significantly reduced to avoid aluminum incorporation saturation. Structures were studied by X-ray diffraction, Raman scattering, and optical absorption spectroscopy. A significant red-shift of absorption edge was observed for SLs with period of 10-40 nm.
Details
- ISSN :
- 1521396X and 00318965
- Volume :
- 188
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi.dedup.....a42f342d14035e4abddf83fb5a535b5a
- Full Text :
- https://doi.org/10.1002/1521-396x(200112)188:2<885::aid-pssa885>3.0.co;2-k