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Integration of a (–Cu–S–) n plane in a metal–organic framework affords high electrical conductivity

Integration of a (–Cu–S–) n plane in a metal–organic framework affords high electrical conductivity

Authors :
Michitoshi Hayashi
Fu-Rong Chen
Batjargal Sainbileg
Kuei-Hsien Chen
Jing-Wen Shen
Li-Chyong Chen
Ling-Fang Wei
Shruti Mendiratta
Tien-Wen Tseng
Kuang-Lieh Lu
Muhammad Usman
Chin-May Ngue
Abhishek Pathak
Ruei-San Chen
Tzuoo-Tsair Luo
Yu-Shin Chang
Source :
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
Publication Year :
2019
Publisher :
Nature Portfolio, 2019.

Abstract

Designing highly conducting metal–organic frameworks (MOFs) is currently a subject of great interest for their potential applications in diverse areas encompassing energy storage and generation. Herein, a strategic design in which a metal–sulfur plane is integrated within a MOF to achieve high electrical conductivity, is successfully demonstrated. The MOF {[Cu2(6-Hmna)(6-mn)]·NH4}n (1, 6-Hmna = 6-mercaptonicotinic acid, 6-mn = 6-mercaptonicotinate), consisting of a two dimensional (–Cu–S–)n plane, is synthesized from the reaction of Cu(NO3)2, and 6,6′-dithiodinicotinic acid via the in situ cleavage of an S–S bond under hydrothermal conditions. A single crystal of the MOF is found to have a low activation energy (6 meV), small bandgap (1.34 eV) and a highest electrical conductivity (10.96 S cm−1) among MOFs for single crystal measurements. This approach provides an ideal roadmap for producing highly conductive MOFs with great potential for applications in batteries, thermoelectric, supercapacitors and related areas.

Details

Language :
English
ISSN :
20411723
Volume :
10
Issue :
1
Database :
OpenAIRE
Journal :
Nature Communications
Accession number :
edsair.doi.dedup.....a49653fb28997fef873a9671f8dab36c