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Fate of Low-Lying Charge-Transfer Excited States in a Donor:Acceptor Blend with a Large Energy Offset
- Source :
- Journal of Physical Chemistry Letters, Journal of Physical Chemistry Letters, American Chemical Society, 2020, 11 (23), pp.10219-10226. ⟨10.1021/acs.jpclett.0c02858⟩
- Publication Year :
- 2020
-
Abstract
- International audience; In an effort to gain a comprehensive picture of the interfacial states in bulk heterojunction solar cells, we provide a combined experimental−theoretical analysis of the energetics and dynamics of low-lying electronic charge-transfer (CT) states in donor:acceptor blends with a large frontier orbital energy offset. By varying the blend composition and temperature, we unravel the static and dynamic contributions to the disordered density of states (DOS) of the CT-state manifold and assess their recombination to the ground state. Namely, we find that static disorder (conformational and electrostatic) shapes the CT DOS and that fast nonradiative recombination crops the low-energy tail of the distribution probed by external quantum efficiency (EQE) measurements (thereby largely contributing to voltage losses). Our results then question the standard practice of extracting microscopic parameters such as exciton energy and energetic disorder from EQE.
- Subjects :
- 0303 health sciences
Materials science
Organic solar cell
Exciton
02 engineering and technology
[CHIM.MATE]Chemical Sciences/Material chemistry
021001 nanoscience & nanotechnology
Molecular physics
Acceptor
Specific orbital energy
03 medical and health sciences
Excited state
Density of states
General Materials Science
Quantum efficiency
Physical and Theoretical Chemistry
0210 nano-technology
Ground state
organic solar cells, computational chemistry
030304 developmental biology
Subjects
Details
- Language :
- English
- ISSN :
- 19487185
- Database :
- OpenAIRE
- Journal :
- Journal of Physical Chemistry Letters, Journal of Physical Chemistry Letters, American Chemical Society, 2020, 11 (23), pp.10219-10226. ⟨10.1021/acs.jpclett.0c02858⟩
- Accession number :
- edsair.doi.dedup.....a5c06aa1b0b82b3e4cb60d8f2d4251e4