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Design and Implementation of Integrated Common Mode Capacitors for SiC JFET Inverters

Authors :
Remi Robutel
Régis Meuret
Cyril Buttay
Christian Martin
Hervé Morel
Paolo Mattavelli
Dushan Boroyevich
Ampère (AMPERE)
École Centrale de Lyon (ECL)
Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL)
Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon)
Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)
Center for power electronics system
University of Wisconsin-Madison
Universita degli Studi di Padova
SAFRAN, Grp Hispano Suiza
SAFRAN Group
DGA
Source :
IEEE Transactions on Power Electronics, IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2013, PP (99), pp.1. ⟨10.1109/TPEL.2013.2279772⟩
Publication Year :
2013
Publisher :
HAL CCSD, 2013.

Abstract

12 pages; International audience; This paper deals with the issue of electromagnetic interference (EMI) in SiC-JFET inverter power modules, and proposes a solution to limit conducted emissions at high frequencies. SiC-JFET inverters can achieve very fast switching, thereby reducing commutation losses, at the cost of a high level of EMI. In order to limit conducted EMI emissions, it is proposed to integrate small-value common mode (CM) capacitors, directly into the power module. High frequency noise, which is usually difficult to filter, is then contained within the module, thus keeping it far from the external network. This approach is in line with the current trend towards the integration of various functions (such as protection, sensors or drivers) around power devices in modern power modules. To demonstrate this concept, the resulting CM noise was investigated, and compared with a standard configuration. Simulations were used to design the integrated capacitors, and measurements were carried out on an experimental SiC-JFET half-bridge structure. A significant reduction was achieved in the experimentally observed CM conducted emissions, with a very minor influence on the switching waveforms, losses and overall size of the system. The benefits and limitations of this design are discussed, for the case of mid-power range inverters for aircraft applications.

Details

Language :
English
ISSN :
08858993
Database :
OpenAIRE
Journal :
IEEE Transactions on Power Electronics, IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2013, PP (99), pp.1. ⟨10.1109/TPEL.2013.2279772⟩
Accession number :
edsair.doi.dedup.....a6ec8203dddd68c68d8d9a2eb322a6b0
Full Text :
https://doi.org/10.1109/TPEL.2013.2279772⟩