Direct surface relief formation by e-beam in amorphous chalcogenide layers

Patterning processes in amorphous Se and $$\hbox {As}_{20}\hbox {Se}_{80}$$ films at short electron beam pulses (from 200 ns to 100 ms) were studied for the first time. The surface reliefs occurring as after-pulses effects were recorded and analysed. Giant hillock formation was detected at about $$200\,\upmu \hbox {s}$$ pulses while very small changes in surface morphology were observed at other pulse durations. The obtained data indicate that the strong increase in e-beam sensitivity of mechanical response (giant surface hillock formation) at about $$200\,\upmu \hbox {s}$$ is due to some resonance effect. A qualitative description is given, relating these times to the characteristic generation and relaxation time of the defects in these materials, which illuminates the process of e-beam induced structural rearrangement. The measurement has been performed at room temperature and at $$-120\,^{\circ }\hbox {C}$$ and only a 20% change in the maximal pattern height has been detected.