Cite
On the correlation between SILC and hole fluence throughout the oxide
MLA
Gabriella Ghidini, et al. “On the Correlation between SILC and Hole Fluence throughout the Oxide.” Microelectronics Reliability, vol. 39, Feb. 1999, pp. 197–201. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....a7e7ce402a8cc9f8458580933bd36dbb&authtype=sso&custid=ns315887.
APA
Gabriella Ghidini, Gerard Ghibaudo, Alessandro Paccagnella, G. Pananakakis, A. Scarpa, & B. De Salvo. (1999). On the correlation between SILC and hole fluence throughout the oxide. Microelectronics Reliability, 39, 197–201.
Chicago
Gabriella Ghidini, Gerard Ghibaudo, Alessandro Paccagnella, G. Pananakakis, A. Scarpa, and B. De Salvo. 1999. “On the Correlation between SILC and Hole Fluence throughout the Oxide.” Microelectronics Reliability 39 (February): 197–201. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....a7e7ce402a8cc9f8458580933bd36dbb&authtype=sso&custid=ns315887.